• Wafer size: up to 200 mm
• Turbo pump backed by a dry roughing pump
• RF Power: 13.56 MHz, 300 W
• Six gas lines: CF4, CHF3, SF6, O2 (20 sccm), O2 (200 sccm), Ar/N2

Training Manual: Reactive_Ion_Etcher(RIE)_SamcoRIE-10NR_0