Furnace – Tystar

  • Designed for processing wafers from 4” diameter down to wafer pieces
  • 25 slot wafer carrier for 4’’/100mm wafers\
  • 18’’ flat zone
  • Load Station with vertical, down draft Laminar Flow Module and Class 100 HEPA Filter
  • Automatic, Speed Controlled Non-Contact Cassette Loader
  • FCS-10/30 Touch Screen Panel Computer Control System
  • DCS 30 host computer control and data collection system
  • Operating temperature: up to 1100 ºC
  • Temperature accuracy: ±1 ºC
  • Automatic recipe controller

Bank1 (atmospheric)

  • Tube 1: Wet/Dry Oxidation
  • Gases supplied: H2/N2, O2, Ar, N2
  • Standard processes: Pyrogenic (hydrogen and oxygen) wet oxidation
  • Oxygen dry oxidation
  • Nitrogen anneal
  • Forming gas anneal
  • Tube 2: n-type doping
  • Tube 3: p-type doping

Bank 2 (LPCVD)

  • Tube 6 for Low Stress Silicon Nitride and Standard Stoichiometric Nitride Deposition recipes.
  • Gases supplied: SiH2Cl2, NH3, N2
  • Standard processes: Stoichiometric silicon nitride and Low-stress silicon nitride

Furnace Tystar 1

Furnace Tystar 2

Training Manual: Furnace_Tystar