Deep Reactive Ion Etcher (DRIE) – STS LpX Pegasus

  • Wafer size: 100 mm
  • Bosch Process License
  • Pegasus Source with 3kW RF Generator
  • Gases: C4F8, SF6, O2, and Ar
  • Processes: Smooth Sidewall (roughness<50 nm), Small Trench (2-3 micron), and Fast Etch Rate (>15 micron/min)

Deep Reactive Ion Etcher

Training Manual: DRIE_STS_LpX_Pegasus